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  • Massachusetts Institute of Technology
  • 6.720J | Integrated Microelectronic Devices

6.720J | Integrated Microelectronic Devices

  • Massachusetts Institute of Technology
  • 7 documents

Welcome to your ultimate resource for mastering 6.720J | Integrated Microelectronic Devices! Our comprehensive study notes provide you with an in-depth understanding of key topics such as semiconductor physics, device fabrication, and circuit integration. Our study guides are designed to simplify complex topics, ensuring you’re well-prepared for exams and can tackle any question with confidence. Additionally, the lecture notes break down course concepts into digestible segments, enhancing your grasp of the material. You’ll also find assignments that reinforce your learning, helping you apply what you've studied effectively. Plus, with our answer keys, you can easily verify your solutions and clarify any uncertainties. Dive into these invaluable resources and elevate your academic journey today!

Explore all documents for 6.720J | Integrated Microelectronic Devices

L37: BJT C-V Characteristics, Small-Signal Equivalent Circuit Models
L37: BJT C-V Characteristics, Small-Signal Equivalent Circuit Models
Massachusetts Institute of Technology 6.720J | Integrated Microelectronic Devices

Lecture Note

L38: BJT High-Frequency Characteristics
L38: BJT High-Frequency Characteristics
Massachusetts Institute of Technology 6.720J | Integrated Microelectronic Devices

Lecture Note

L8: Non-Uniform Doping Distribution
L8: Non-Uniform Doping Distribution
Massachusetts Institute of Technology 6.720J | Integrated Microelectronic Devices

Lecture Note

L9: Quasi-Fermi Levels, Continuity Equations
L9: Quasi-Fermi Levels, Continuity Equations
Massachusetts Institute of Technology 6.720J | Integrated Microelectronic Devices

Lecture Note

L27: I-V Characteristics (Cont.) - Body Effect, Back Bias
L27: I-V Characteristics (Cont.) - Body Effect, Back Bias
Massachusetts Institute of Technology 6.720J | Integrated Microelectronic Devices

Lecture Note

L6: Carrier Dynamics, Thermal Motion
L6: Carrier Dynamics, Thermal Motion
Massachusetts Institute of Technology 6.720J | Integrated Microelectronic Devices

Lecture Note

L28: I-V Characteristics (Cont.): Channel-Length Modulation, Sub Threshold Regime
L28: I-V Characteristics (Cont.): Channel-Length Modulation, Sub Threshold Regime
Massachusetts Institute of Technology 6.720J | Integrated Microelectronic Devices

Lecture Note

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